# Silicon Carbide

Nasa Glenn Research Center, Silicon Carbide Electronics and Sensors, <https://www1.grc.nasa.gov/research-and-engineering/silicon-carbide-electronics-and-sensors/> (> 500ºC)

Ozark ICs. Designs from -180°C to 500°C. <https://www.ozarkic.com/>

NASA Glenn is working on 4-bit ADC, 4-bit DAC, Op Amps, 4x4 static RAM, Source Separation Sensor Signal Transmitter, Ring Oscillators, Binary Amplitude Modulation RF Transmitter. \[1]

Is NASA Glenn working on bandgap reference, a resonator, a ROM, or digital components that can be used for a microcontroller?

High-temperature voltage and current references  have been designed in a silicon carbide CMOS process \[4]

\[1] PowerPoint Presentation, "Processing and Characterization of Thousand- Hour 500 °C Durable 4H-SiC JFET Integrated Circuits"

\[2] "Emerging Trends in Silicon Carbide Power Electronics Design", Emerging Trends in Silicon Carbide Power Electronics Design

\[3] A. Rahman, P. D. Shepherd, S. A. Bhuyan, S. Ahmed, S. K. Akula, L. Caley, H. A. Mantooth, and J. Di, “A family of CMOS analog and mixed signal circuits in SiC for high temperature electronics,” in 2015 IEEE Aerospace Conference, Big Sky, MT, 2015, pp. 1-10. <https://ieeexplore.ieee.org/document/7119302>

\[4] "High-Temperature Voltage and Current References in Silicon Carbide CMOS", 2016. <https://ieeexplore.ieee.org/abstract/document/7458832/authors#authors>

\[5] N. Kuhns *et al*., "Complex High-Temperature CMOS Silicon Carbide Digital Circuit Designs," in *IEEE Transactions on Device and Materials Reliability*, vol. 16, no. 2, pp. 105-111, June 2016, doi: 10.1109/TDMR.2016.2530664. <https://ieeexplore.ieee.org/document/7407369>\\
